Please use this identifier to cite or link to this item:
https://doi.org/10.1155/2014/752967
| Title: | Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide | Authors: | Ge J. Tang M. Wong J. Zhang Z. Dippell T. Doerr M. Hohn O. Huber M. Wohlfart P. Aberle A.G. Mueller T. |
Issue Date: | 2014 | Publisher: | Hindawi Publishing Corporation | Citation: | Ge J., Tang M., Wong J., Zhang Z., Dippell T., Doerr M., Hohn O., Huber M., Wohlfart P., Aberle A.G., Mueller T. (2014). Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide. International Journal of Photoenergy 2014 : 752967. ScholarBank@NUS Repository. https://doi.org/10.1155/2014/752967 | Source Title: | International Journal of Photoenergy | URI: | http://scholarbank.nus.edu.sg/handle/10635/145992 | ISSN: | 1110662X | DOI: | 10.1155/2014/752967 |
| Appears in Collections: | Staff Publications Elements |
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| 752967.pdf | 2.22 MB | Adobe PDF | OPEN | None | View/Download |
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