Please use this identifier to cite or link to this item: https://doi.org/10.1155/2014/752967
Title: Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
Authors: Ge J.
Tang M.
Wong J.
Zhang Z.
Dippell T.
Doerr M.
Hohn O.
Huber M.
Wohlfart P.
Aberle A.G. 
Mueller T.
Issue Date: 2014
Publisher: Hindawi Publishing Corporation
Citation: Ge J., Tang M., Wong J., Zhang Z., Dippell T., Doerr M., Hohn O., Huber M., Wohlfart P., Aberle A.G., Mueller T. (2014). Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide. International Journal of Photoenergy 2014 : 752967. ScholarBank@NUS Repository. https://doi.org/10.1155/2014/752967
Source Title: International Journal of Photoenergy
URI: http://scholarbank.nus.edu.sg/handle/10635/145992
ISSN: 1110662X
DOI: 10.1155/2014/752967
Appears in Collections:Staff Publications

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