Magneto-electronic properties of iron oxide for spintronic applications

Abstract

In this project, we have developed a method for fabricating half-metallic Fe3O4 films using electron beam deposition technique. We have investigated in a systematic way the interface properties of iron oxide films deposited on various buffer layers and observed some interesting properties. The low temperature magneto-transport properties of Fe3O4 have been studied in detail. We have reported that the first-order metal-insulator transition in Fe3O4 is strongly dependent on the buffer layer material used. We have investigated the magneto-electronic properties of Fe3O4 below and above the metal-insulator transition temperature. The role of field cooling on the transition temperature has also been investigated.