Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/144273
Title: INTEGRATION OF INGAAS CHANNEL FIELD-EFFECT TRANSISTORS WITH ELECTRONIC AND PHOTONIC DEVICES
Authors: ANNIE KUMAR
Keywords: Integration, InGaAs, MOSHEMTs, MOSFETs, QW Lasers, OEICs
Issue Date: 24-Jan-2018
Citation: ANNIE KUMAR (2018-01-24). INTEGRATION OF INGAAS CHANNEL FIELD-EFFECT TRANSISTORS WITH ELECTRONIC AND PHOTONIC DEVICES. ScholarBank@NUS Repository.
Abstract: The future high performance and multifunctional integrated circuits and systems may require cost effective integration of high speed III-V electronic and photonic devices with standard Si-CMOS on the same chip. This dissertation highlights the fabrication process and device design optimization required for realization of high performance InGaAs FETs on Si substrate, while considering the device compatibility for integration with other electronic and photonic devices. Various process development and fabrication of InGaAs channel metal-oxide-semiconductor high electron mobility transistors on InP and Si substrates are discussed with an ultimate aim of integrating them with high density Si CMOS on 200 mm substrate. Monolithic integration of InGaAs MOSFETs with III-V laser on a common platform with a low overall thermal budget process for advanced optoelectronic integrated circuits is discussed. Electrically pumped III-V quantum-well lasers were realized at room temperature on Si substrate.
URI: http://scholarbank.nus.edu.sg/handle/10635/144273
Appears in Collections:Ph.D Theses (Open)

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