Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14144
Title: Optical characterizations of nano-scaled silicon
Authors: ZENG YUPING
Keywords: RamanSpectroscopy,Amorphous silicon, Laser processing
Issue Date: 20-Jul-2004
Source: ZENG YUPING (2004-07-20). Optical characterizations of nano-scaled silicon. ScholarBank@NUS Repository.
Abstract: Optical Characterizations of Nano-scaled SiliconAbstractBy Zeng YupingSupervisors: A/P Shen Zexiang, Department of PhysicsA/P Lu Yongfeng: Department of Electrical and Computer EngineeringThere are many techniques to investigate optical properties of semiconductormaterials, such as Raman spectroscopy and photoluminescence spectroscopy, whichare both non-destructive methods. In my project, Raman spectroscopy was used as apowerful tool to determine the recrystallization and thickness of amorphous siliconas well. The intensity of Raman spectra increases as the energy of the annealinglaser incident on the amorphous layer is larger than 0.4 J/cm2. A new method usingthe substrate Raman peak intensity to determine the thickness of the amorphous Silayer was investigated. In addition, photoluminescence spectroscopy was adopted todetermine the strong light emission from nano-scale silicon prepared by excimerlaser. Scanning Electron Microscopy was also used to map the nano-scale silicon. Itwas found that silicon oxide plays a key role in the luminescence and pulsed laserablation could be one way to obtain silicon structures with strong light emission.
URI: http://scholarbank.nus.edu.sg/handle/10635/14144
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