Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13228
Title: Theoretical study of elementary surface reactions in silicon epitaxial growth
Authors: SHI JING
Keywords: Hydrogen, Silicon, Adsorption, Disilane, DFT, Epitaxy
Issue Date: 21-Apr-2008
Source: SHI JING (2008-04-21). Theoretical study of elementary surface reactions in silicon epitaxial growth. ScholarBank@NUS Repository.
Abstract: The growth of silicon via gas-source molecular beam epitaxy (GSMBE) and chemical vapor deposition (CVD) involves sequential decomposition of precursors such as silane and disilane, migration of surface species, recombination and desorption of hydrogen. Experiments found that the recombinative desorption of hydrogen and the dissociative adsorption of precursor are particularly important during silicon epitaxial growth. In this work, we investigated these two elementary surface reactions using pseudopotential planewave density functional method. We examined the reaction mechanisms by calculating the energy barriers for these surface reactions. In addition, the interaction of hydrogen with the stepped Si(100) surface are also explored. We found that the presence of step has a significant influence on silicon growth. Our results provide new insights into the microscopic processes during silicon expitaxial growth.
URI: http://scholarbank.nus.edu.sg/handle/10635/13228
Appears in Collections:Ph.D Theses (Open)

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B Acknowledgement.pdf47.6 kBAdobe PDF

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C Table of Contents.pdf59.22 kBAdobe PDF

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D Summary.pdf49.18 kBAdobe PDF

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E List of Tables.pdf47.46 kBAdobe PDF

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F List of Figures.pdf53.33 kBAdobe PDF

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01Chap.pdf485.38 kBAdobe PDF

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02Chap.pdf164.15 kBAdobe PDF

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