Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13138
Title: AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
Authors: LIU CHANG
Keywords: AlGaN/GaN HEMTs, MOS-HEMTs, high-k dielectric, epitaxial growth, pulsed-laser-deposition, device characterizations
Issue Date: 30-Apr-2008
Source: LIU CHANG (2008-04-30). AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. ScholarBank@NUS Repository.
Abstract: AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with reactive-sputtered high dielectric constant (high-k) HfO2 and pulsed-laser-deposition (PLD) grown epitaxial Sc2O3 gate oxides were successfully fabricated and characterized in this work. Owing to the good oxide quality and excellent interface characteristics of these oxide/HEMT heterostructures, both HfO2- and Sc2O3-based MOS-HEMTs exhibited significant enhanced device performance relative to the regular Schottky-gate HEMTs. These include higher driving current capacity, lower gate leakage current, larger gate voltage swing, faster small-signal response, and a better immunity to drain current collapse. When comparing between these two kinds of MOS-HEMTs, HfO2 MOS-HEMTs have the advantages in terms of efficient gate modulation, such as a larger device transconductance due to the high-k property of HfO2, while the Sc2O3 counterpart prevailed in maximum drain current density, gate leakage and the pulsed-mode characteristics, most probably a direct consequence of the epitaxial nature of the PLD-grown Sc2O3 gate oxide.
URI: http://scholarbank.nus.edu.sg/handle/10635/13138
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02_Acknowledgements.pdf13.38 kBAdobe PDF

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03_Table of Contents.pdf28.34 kBAdobe PDF

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04_Summary.pdf18.88 kBAdobe PDF

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05&06_List of Figures&Tables.pdf246.12 kBAdobe PDF

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07-12_Chapter 1 - 6.pdf5.1 MBAdobe PDF

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13_Reference.pdf276.01 kBAdobe PDF

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14-17_Appendix A-D.pdf325.95 kBAdobe PDF

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18_Publications.pdf27.89 kBAdobe PDF

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