Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13039
Title: Size Effect of Ferroelectric Thin Films - Limit of Size
Authors: LACASSIN LIONEL ALEXANDRE PHILIPPE
Keywords: Ferroelectric materials, PZT, thin film, data storage, size effect
Issue Date: 4-Jan-2008
Source: LACASSIN LIONEL ALEXANDRE PHILIPPE (2008-01-04). Size Effect of Ferroelectric Thin Films - Limit of Size. ScholarBank@NUS Repository.
Abstract: Ferroelectric materials constitute as key materials for data storage applications. However, the dependence of their physical properties (such as dielectric constant) on the effect of size may limit their main applications in portable devices. This present work underlines experimentally the drop in the average dielectric constant of PZT used in thin films below 50nm thick. Linear thermo mechanics considerations show that shear stresses occurring at the interface between the functional material and the substrate may overload the functional material and render its ferroelectric properties to diminish. New way of investigation using material patterning is hence proposed in order to eradicate the limit of size encountered experimentally.
URI: http://scholarbank.nus.edu.sg/handle/10635/13039
Appears in Collections:Master's Theses (Open)

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