Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/12976
Title: Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
Authors: LOW AIK SENG, TONY
Keywords: quantum, modeling, UTB, mosfet, bandstructure, transport
Issue Date: 7-Mar-2008
Source: LOW AIK SENG, TONY (2008-03-07). Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges. ScholarBank@NUS Repository.
Abstract: This thesis studies the bandstructure and transport physics in Si and Ge ultra-thin-body MOSFET with various surface orientations. Bandstructure calculation are done using conventional effective mass approach, empirical pseudopotential and the density functional theory. Transport in the dissipative regime uses Boltzmann equation and mobility for these devices are calculated. For quantum transport, we explored various formalism from non-equilibrium Green function, scattering matrix, finite difference versus finite element approaches. We compute the ballistic limits of these devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/12976
Appears in Collections:Ph.D Theses (Open)

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