Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.4913451
| Title: | The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditions | Authors: | Hameiri Z. Ma, F.-J. |
Issue Date: | 2015 | Publisher: | American Institute of Physics Inc. | Citation: | Hameiri Z., Ma, F.-J. (2015). The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditions. Journal of Applied Physics 117 (8). ScholarBank@NUS Repository. https://doi.org/10.1063/1.4913451 | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/128145 | ISSN: | 00218979 | DOI: | 10.1063/1.4913451 |
| Appears in Collections: | Staff Publications |
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