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https://doi.org/10.1016/j.jallcom.2015.02.139
| Title: | Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation | Authors: | Liu, X. Liu, Z. Pannirselvam, S. Pan, J. Liu, W. Jia, F. Lu, Y. Liu, C. Yu, W. He, J. Tan, L.S. |
Issue Date: | 2015 | Publisher: | Elsevier | Citation: | Liu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., Lu, Y., Liu, C., Yu, W., He, J., Tan, L.S. (2015). Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation. Journal of Alloys and Compounds 636 : 191-195. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2015.02.139 | Source Title: | Journal of Alloys and Compounds | URI: | http://scholarbank.nus.edu.sg/handle/10635/128133 | ISSN: | 09258388 | DOI: | 10.1016/j.jallcom.2015.02.139 |
| Appears in Collections: | Staff Publications |
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