Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/122482
Title: MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES
Authors: ZHANG LI
Keywords: III-nitride semiconductor MOCVD growth characterization
Issue Date: 21-Aug-2015
Citation: ZHANG LI (2015-08-21). MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES. ScholarBank@NUS Repository.
URI: http://scholarbank.nus.edu.sg/handle/10635/122482
Appears in Collections:Ph.D Theses (Closed)

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