MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES

Abstract

THE OBJECTIVE OF THIS THESIS IS TO INVESTIGATE THE GROWTH OF III-NITRIDE GROWTH ON 200 MM SILICON SUBSTRATE AND DEMONSTRATE GAN-BASED INTEGRATED DEVICES ON SILICON SUBSTRATES. THIS THESIS IS DIVIDED INTO TWO MAIN PARTS. THE BASIC PART IS PRESENTED IN CHAPTERS 1 TO 3 AND THE EXPERIMENTAL PART INCLUDES THE CHAPTERS 4 TO 5. FIRST, THE MOTIVATION OF GROWING III-NITRIDE ON 200 MM SI IS DISCUSSED IN CHAPTER 1. IN CHAPTER 2, THE BASIC MATERIAL PROPERTIES OF III-NITRIDE AND THE PRINCIPLES OF OPERATION OF EXPERIMENTAL TOOLS ARE SUMMARIZED FOR QUICK REFERENCE. ADDITIONALLY, A LITERATURE REVIEW OF THE CURRENT STATUS OF GAN-ON-SI IS PROVIDED IN CHAPTER 3. IN THE EXPERIMENTAL PART, ORIGINAL CONTRIBUTION MADE BY THIS THESIS TO GAN-ON-SI PLATFORM IS PRESENTED. IN CHAPTER 4, A DETAILED DISCUSSION ABOUT THE GROWTH OF III-NITRIDE ON 200MM SI SUBSTRATES IS PRESENTED, INCLUDING THE INVESTIGATION ON ALN/SI INTERFACE, CRYSTALLOGRAPHIC TILTING INTRODUCED BY SUBSTRATE SURFACE STEPS, STRAIN ENGINEERING, DISLOC