Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/121039
Title: DELAMINATION IN MICROELECTRONICS PACKAGES: WITH CONSIDERATION OF THREE-DIMENSIONAL AND RATE EFFECTS
Authors: HO SIOW LING
Keywords: Delamination,Interfacial Fracture Mechanics, Microelectronics Packagings, Cohesive Zone Model, Temperature Effects, Three-Dimensional
Issue Date: 18-Aug-2011
Source: HO SIOW LING (2011-08-18). DELAMINATION IN MICROELECTRONICS PACKAGES: WITH CONSIDERATION OF THREE-DIMENSIONAL AND RATE EFFECTS. ScholarBank@NUS Repository.
Abstract: Interfacial delamination has been a concern in microelectronics packages. During the manufacturing and assembly process, high interfacial stress can result from thermal loading as the coefficient of thermal expansion varies among the various components in a microelectronics package. The objective of this thesis is to further the knowledge on the phenomenon of delamination in microelectronics packages, primarily through numerical studies. Finite element models (FEM) accompanied with interfacial fracture mechanics concepts and cohesive zone models (CZM) are employed in this work. Besides, experiments were carried out to capture the characteristics of delamination propagation. The scope of analyses includes the effect of geometric parameters, multiple delaminations, shape of crack front, location of penny-shaped delamination and the impact of two-dimensional versus three-dimensional models on fracture mechanics parameters. Heating rate dependent progressive delamination at the pad/Encapsulant interface is captured experimentally and the phenomenon is modeled using CZM.
URI: http://scholarbank.nus.edu.sg/handle/10635/121039
Appears in Collections:Ph.D Theses (Open)

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