ATOMIC SCALE INTERCONNECTS ON HYDROGEN PASSIVATED SI(100)

Abstract

THE OBJECTIVE OF THIS PHD RESEARCH PROGRAM IS TO CHARACTERIZE HYDROGEN PASSIVATED SI(100) SURFACE AS WELL AS ISOLATED DANGLING BOND(S) ON THE SI(100):H SURFACE AND EXPLORE THE POSSIBILITY TO CREATE A DANGLING BOND DEVICE.

ON THE HYDROGEN PASSIVATED SI(100) SURFACE, CONTRAST INVERSION BETWEEN FILLED- AND EMPTY-STATE LOW TEMPERATURE SCANNING TUNNELING MICROSCOPE IMAGES WAS INVESTIGATE. ISOLATED DANGLING BOND(S) ON SI(100):H SURFACE WAS CREATED AND STUDIED. WITH THE UNDERSTANDING AND KNOWLEDGE OF BOTH PHYSICAL AND ELECTRICAL PROPERTIES OF ISOLATED DANGLING BOND(S), THE POSSIBILITY OF CREATING A DANGLING BOND DEVICE WAS EXPLORED. THE RESULTS OF THE MEASUREMENT WERE COMPARED WITH THE THEORETICAL CALCULATIONS.

IN THE EFFORT OF INTERCONNECT ATOMIC SCALE DEVICE TO MESOSCOPIC ELECTRODE, A PROTOCOL TO FORM TRIANGULAR GOLD NANOISLANDS ON MOS₂ AND PRINT THEM ON SI(100):H IN SITU AS WELL AS A STANDARD OPERATION PROCEDURE FOR TWO-TIP CONDUCTION MEASUREMENTS UNDER UHV WERE DEVELOPED.