Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ESCINANO.2010.5701078
| Title: | Study on SiGe nanowire shape engineering and Ge condensation | Authors: | Ma, F.-J. Chia, B.S. Rustagi, S.C. Samudr, G.C. |
Issue Date: | 2010 | Citation: | Ma, F.-J.,Chia, B.S.,Rustagi, S.C.,Samudr, G.C. (2010). Study on SiGe nanowire shape engineering and Ge condensation. 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ESCINANO.2010.5701078 | Abstract: | Accurate modeling of stress-retarded orientation-dependent 2D oxidation is carried out by matching experimental and simulated oxide thickness of silicon FIN nanostructures over a wide range of temperature and time in dry oxygen. The new model is used to study shape engineering and Ge condensation in SiGe nanowire formation. ©2010 IEEE. | Source Title: | 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/117276 | ISBN: | 9781424488544 | DOI: | 10.1109/ESCINANO.2010.5701078 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.