Please use this identifier to cite or link to this item:
|Title:||Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices|
|Citation:||Liu, J., Gornik, E., Xu, S., Zheng, H. (1997-11). Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices. Semiconductor Science and Technology 12 (11) : 1422-1424. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/12/11/015|
|Abstract:||Electron transport in heavily doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage characteristics exhibit features of negative differential velocity at the position of the lowest narrow miniband and high electric field domains at high biases. Under strong magnetic field, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which is manifested as oscillations in the conductance-voltage characteristics.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 15, 2018
WEB OF SCIENCETM
checked on May 22, 2018
checked on Apr 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.