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|Title:||Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices|
|Citation:||Liu, J., Gornik, E., Xu, S., Zheng, H. (1997-11). Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices. Semiconductor Science and Technology 12 (11) : 1422-1424. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/12/11/015|
|Abstract:||Electron transport in heavily doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage characteristics exhibit features of negative differential velocity at the position of the lowest narrow miniband and high electric field domains at high biases. Under strong magnetic field, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which is manifested as oscillations in the conductance-voltage characteristics.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
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