Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/12/11/015
Title: Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
Authors: Liu, J.
Gornik, E.
Xu, S. 
Zheng, H.
Issue Date: Nov-1997
Citation: Liu, J., Gornik, E., Xu, S., Zheng, H. (1997-11). Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices. Semiconductor Science and Technology 12 (11) : 1422-1424. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/12/11/015
Abstract: Electron transport in heavily doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage characteristics exhibit features of negative differential velocity at the position of the lowest narrow miniband and high electric field domains at high biases. Under strong magnetic field, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which is manifested as oscillations in the conductance-voltage characteristics.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/117151
ISSN: 02681242
DOI: 10.1088/0268-1242/12/11/015
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