Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2004.03.136
Title: Sub-keV secondary ion mass spectrometry depth profiling: Comparison of sample rotation and oxygen flooding
Authors: Liu, R. 
Wee, A.T.S. 
Keywords: Oxygen flooding
Sample rotation
SIMS
Issue Date: 15-Jun-2004
Citation: Liu, R., Wee, A.T.S. (2004-06-15). Sub-keV secondary ion mass spectrometry depth profiling: Comparison of sample rotation and oxygen flooding. Applied Surface Science 231-232 : 653-657. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2004.03.136
Abstract: Following the increasingly stringent requirements in the characterization of sub-micron IC devices, an understanding of the various factors affecting ultra shallow depth profiling in secondary ion mass spectrometry (SIMS) has become crucial. Achieving high depth resolution (of the order of 1nm) is critical in the semiconductor industry today, and various methods have been developed to optimize depth resolution. In this paper, we will discuss ultra shallow SIMS depth profiling using B and Ge delta-doped Si samples using low energy 0.5keV O2 + primary beams. The relationship between depth resolution of the delta layers and surface topography measured by atomic force microscopy (AFM) is studied. The effect of oxygen flooding and sample rotation, used to suppress surface roughening is also investigated. Oxygen flooding was found to effectively suppress roughening and gives the best depth resolution for B, but sample rotation gives the best resolution for Ge. Possible mechanisms for this are discussed. © 2004 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/116787
ISSN: 01694332
DOI: 10.1016/j.apsusc.2004.03.136
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