Please use this identifier to cite or link to this item: https://doi.org/10.1109/SPI.2002.258308
Title: Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealing
Authors: Loh, S.W.
Zhang, D.H.
Liu, R. 
Li, C.Y.
Wee, A.T.S. 
Issue Date: 2002
Source: Loh, S.W.,Zhang, D.H.,Liu, R.,Li, C.Y.,Wee, A.T.S. (2002). Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealing. Proceedings - 6th IEEE Workshop on Signal Propagation on Interconnects, SPI : 173-176. ScholarBank@NUS Repository. https://doi.org/10.1109/SPI.2002.258308
Abstract: We have carried out direct diffusion measurements of metal organic chemical vapor deposition (MOCVD) Cu into Ta and Ta into cvd Cu. Copper films deposited by MOCVD technique of 500nm thickness were grown onto a thick Ta layer of 1μm deposited by Ionized Metal Plasma (IMP). Samples were annealed in a furnace system from temperatures ranging from 300°C to 550°C for periods of 1/2 an hour. The electrical and mechanical properties of the structures were examined by experiments such as sheet resistance, atomic force microscopy (AFM), scanning electron microscopy (SEM), and x-ray diffraction (XRD). The diffusion profile was performed using Secondary ion mass spectroscopy (SIMS). The Cu diffusion coefficient in Ta can be described by 2.845 × 10-14 exp (-0.1452eV/kT) cm2/s while the Ta diffusion coefficient in Cu can be described by 1.3417 × 10-13 exp (-0.267eV/kT) cm 2/s. © 2002 IEEE.
Source Title: Proceedings - 6th IEEE Workshop on Signal Propagation on Interconnects, SPI
URI: http://scholarbank.nus.edu.sg/handle/10635/116746
ISBN: 0780398211
DOI: 10.1109/SPI.2002.258308
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