Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(03)00008-X
Title: Effects of first rapid thermal annealing temperature on Co silicide formation
Authors: Peng, H.J.
Shen, Z.X. 
Lim, E.H.
Lai, C.W.
Liu, R. 
Wee, A.T.S. 
Sameer, A.
Dai, J.Y.
Zhang, B.C.
Zheng, J.Z.
Issue Date: Aug-2003
Citation: Peng, H.J., Shen, Z.X., Lim, E.H., Lai, C.W., Liu, R., Wee, A.T.S., Sameer, A., Dai, J.Y., Zhang, B.C., Zheng, J.Z. (2003-08). Effects of first rapid thermal annealing temperature on Co silicide formation. Solid-State Electronics 47 (8) : 1249-1253. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(03)00008-X
Abstract: Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2 film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature. © 2003 Elsevier Science Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/116312
ISSN: 00381101
DOI: 10.1016/S0038-1101(03)00008-X
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on May 21, 2018

WEB OF SCIENCETM
Citations

5
checked on May 21, 2018

Page view(s)

45
checked on May 25, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.