Effects of first rapid thermal annealing temperature on Co silicide formation

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(03)00008-X

Title:	Effects of first rapid thermal annealing temperature on Co silicide formation
Authors:	Peng, H.J. Shen, Z.X. Lim, E.H. Lai, C.W. Liu, R. Wee, A.T.S. Sameer, A. Dai, J.Y. Zhang, B.C. Zheng, J.Z.
Issue Date:	Aug-2003
Citation:	Peng, H.J., Shen, Z.X., Lim, E.H., Lai, C.W., Liu, R., Wee, A.T.S., Sameer, A., Dai, J.Y., Zhang, B.C., Zheng, J.Z. (2003-08). Effects of first rapid thermal annealing temperature on Co silicide formation. Solid-State Electronics 47 (8) : 1249-1253. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(03)00008-X
Abstract:	Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2 film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature. © 2003 Elsevier Science Ltd. All rights reserved.
Source Title:	Solid-State Electronics
URI:	http://scholarbank.nus.edu.sg/handle/10635/116312
ISSN:	00381101
DOI:	10.1016/S0038-1101(03)00008-X
Appears in Collections:	Staff Publications

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