Domain structure and in-plane switching in a highly strained Bi 0.9Sm0.1FeO3 film

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3664394

Title:	Domain structure and in-plane switching in a highly strained Bi 0.9Sm0.1FeO3 film
Authors:	Chen, W. Ren, W. You, L. Yang, Y. Chen, Z. Qi, Y. Zou, X. Wang, J. Sritharan, T. Yang, P. Bellaiche, L. Chen, L.
Issue Date:	28-Nov-2011
Citation:	Chen, W., Ren, W., You, L., Yang, Y., Chen, Z., Qi, Y., Zou, X., Wang, J., Sritharan, T., Yang, P., Bellaiche, L., Chen, L. (2011-11-28). Domain structure and in-plane switching in a highly strained Bi 0.9Sm0.1FeO3 film. Applied Physics Letters 99 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3664394
Abstract:	We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3 film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-plane polarization up to 30 C/cm2. Piezoresponse force microcopy demonstrates that a 180 in-plane polarization switching accompanied by a 90 domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3. © 2011 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/116304
ISSN:	00036951
DOI:	10.1063/1.3664394
Appears in Collections:	Staff Publications

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