Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/41/24/245407
Title: Role of hydroxyl groups in the formation of defect configurations in silicon devices
Authors: Ligatchev, V.
Sim, L.Y.
Ng, M.-F.
Xie, X.N. 
Yang, S.-W.
Issue Date: 2008
Citation: Ligatchev, V., Sim, L.Y., Ng, M.-F., Xie, X.N., Yang, S.-W. (2008). Role of hydroxyl groups in the formation of defect configurations in silicon devices. Journal of Physics D: Applied Physics 41 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/41/24/245407
Abstract: We use density functional theory to investigate five types of neutral hydroxyl group (-OH) defect within bulk Si, in terms of structural and electronic properties. We find that two out of these five defect configurations yield degenerate n-type direct current conductivity and intra-band gap levels that lie in the vicinities of both the valence and the conduction bands. For the other three defect configurations, the defect bands appear near the valence band maximum (VBM) only and the Fermi level lies close to the mid-gap. Our results are generally consistent with the available experimental data on hydrogen-, oxygen- and hydroxyl-related defect states in bulk Si. More importantly, a few new fairly shallow donor-like states are predicted by our simulations in the VBM vicinity. © 2008 IOP Publishing Ltd.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/115918
ISSN: 00223727
DOI: 10.1088/0022-3727/41/24/245407
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