Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.cplett.2004.02.097
Title: Oxide growth and its dielectrical properties on alkylsilated native-SiO2/Si surface
Authors: Xie, X.N. 
Chung, H.J. 
Sow, C.H. 
Wee, A.T.S. 
Issue Date: 21-Apr-2004
Citation: Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2004-04-21). Oxide growth and its dielectrical properties on alkylsilated native-SiO2/Si surface. Chemical Physics Letters 388 (4-6) : 446-451. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cplett.2004.02.097
Abstract: The kinetics and mechanism of probe-induced oxide growth on an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) passivated native-SiO2/Si surface have been investigated using atomic force microscopy (AFM). It was found that oxidation strongly depends on tip polarity and the local chemistry of OTS molecules. At negative tip voltage, oxide grows and the oxidation involves a decomposition and depletion of OTS SAM. While under positive tip bias, OTS molecules are partially degraded. The dielectrical properties of the oxide were characterized by I-V measurements using current sensing AFM. The barrier height of AFM grown oxide, in comparison with thermal oxide and OTS SAM, was determined. Current spikes relating to the release of single charge were also observed on the I-V curves of AFM oxide. © 2004 Elsevier B.V. All rights reserved.
Source Title: Chemical Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/115856
ISSN: 00092614
DOI: 10.1016/j.cplett.2004.02.097
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