Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2008.04.007
Title: Formation of bismuth nanodot in (4 × 4) vanadium oxide nanomesh on Pd(1 1 1)
Authors: Hayazaki, S.
Matsui, T.
Zhang, H.L. 
Chen, W. 
Wee, A.T.S. 
Yuhara, J.
Keywords: Bismuth
Nanodot
Nanomesh
Palladium
Scanning tunneling microscopy
Self-assembly
Vanadium oxide
Issue Date: 15-Jun-2008
Citation: Hayazaki, S., Matsui, T., Zhang, H.L., Chen, W., Wee, A.T.S., Yuhara, J. (2008-06-15). Formation of bismuth nanodot in (4 × 4) vanadium oxide nanomesh on Pd(1 1 1). Surface Science 602 (12) : 2025-2028. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2008.04.007
Abstract: The formation of bismuth (Bi) nanodots on a well ordered (4 × 4) vanadium oxide nanomesh on Pd(1 1 1) has been investigated by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and X-ray photoelectron spectroscopy (XPS). At very low Bi coverage of 0.01 ML, a Bi atom locates in the vanadium oxide nanomesh and every Bi atom forms an isolated Bi nanodot. At the Bi coverage of 0.06 ML, two different heights of Bi nanodots are observed by STM. When the Bi coverage increased to 0.2 ML, most of the nanoholes in the nanomesh are occupied by Bi nanodots, and the remaining Bi atoms form Bi clusters on the vanadium oxide surface. © 2008 Elsevier B.V. All rights reserved.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/115737
ISSN: 00396028
DOI: 10.1016/j.susc.2008.04.007
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