Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3258201
Title: High frequency dielectric properties distribution of BiFeO3 thin film using near-field microwave microscopy
Authors: Zhang, X.-Y. 
Wang, X.-C.
Xu, F. 
Ma, Y.-G. 
Ong, C.K. 
Issue Date: 2009
Citation: Zhang, X.-Y., Wang, X.-C., Xu, F., Ma, Y.-G., Ong, C.K. (2009). High frequency dielectric properties distribution of BiFeO3 thin film using near-field microwave microscopy. Review of Scientific Instruments 80 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3258201
Abstract: A near-field scanning microwave microscopy (NSMM) is applied to investigate the local perpendicular dielectric information of single-phase multiferroic BiFeO3 thin film and single crystal LaAlO3 material. Our NSMM is composed of a vector network analyzer and a simple open-ended coaxial probe, which is quite different from the commercial probe with a λ/4 coaxial resonator. The local permittivity is calculated quantitatively according to resonance frequency shift under the quasistatic microwave perturbation theory. We make use of the magnitude of reflection loss S11 to construct an image reflecting the distribution of dielectric constant of a material. A homogeneous permittivity is observed in LaAlO3 material and the inhomogeneous permittivity ε=215-250 for BiFeO3 film is depicted from the change of feedback signal S11 over an area of 100×100 μ m2. © 2009 American Institute of Physics.
Source Title: Review of Scientific Instruments
URI: http://scholarbank.nus.edu.sg/handle/10635/115131
ISSN: 00346748
DOI: 10.1063/1.3258201
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