Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2013.6466003
Title: The effect of intrinsic defects on resistive switching based on p-n heterojunction
Authors: Zheng, K.
Sun, X.W.
Teo, K.L. 
Issue Date: 2013
Citation: Zheng, K.,Sun, X.W.,Teo, K.L. (2013). The effect of intrinsic defects on resistive switching based on p-n heterojunction. Proceedings - Winter Simulation Conference : 219-221. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2013.6466003
Abstract: We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaOx and p-NiOx, leading to the switching between Ohmic and diode characteristics of the device. © 2013 IEEE.
Source Title: Proceedings - Winter Simulation Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/114588
ISBN: 9781467348416
ISSN: 08917736
DOI: 10.1109/INEC.2013.6466003
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