Please use this identifier to cite or link to this item: https://doi.org/10.1109/RELPHY.2006.251308
Title: Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuits
Authors: Shen, C.
Yang, T.
Li, M.-F. 
Samudra, G. 
Yeo, Y.-C. 
Zhu, C.X. 
Rustagi, S.C.
Yut, M.B.
Kwong, D.-L.
Issue Date: 2006
Citation: Shen, C., Yang, T., Li, M.-F., Samudra, G., Yeo, Y.-C., Zhu, C.X., Rustagi, S.C., Yut, M.B., Kwong, D.-L. (2006). Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuits. IEEE International Reliability Physics Symposium Proceedings : 653-654. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2006.251308
Abstract: Fast component of Vth instability in MOSFET with HfO2 gate dielectric is systematically measured and characterized. A charge trapping/detrapping model is used to simulate the Vth instability with overall agreement with the experiments. Experimental and modeling data provide and predict the fast Vth shift under both static and dynamic stress conditions. These data are incorporated into HSpice circuit simulation to evaluate the impact of Vth shift on the performance of digital circuit in realistic situations. Considering the properties of the fast V th instability, circuit performance can be optimized by circuit design in addition to process improvements. This should be included to the guideline of process development and circuit design for future CMOSFET digital systems. © 2006 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/114559
ISBN: 0780394992
ISSN: 15417026
DOI: 10.1109/RELPHY.2006.251308
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