Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/114535
Title: Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures
Authors: Goo, C.H.
Lau, W.S. 
Chong, T.C. 
Tan, L.S. 
Issue Date: 21-Oct-1996
Source: Goo, C.H.,Lau, W.S.,Chong, T.C.,Tan, L.S. (1996-10-21). Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures. Applied Physics Letters 69 (17) : 2543-2545. ScholarBank@NUS Repository.
Abstract: Despite many separate studies of the two dominant defects, i.e., As precipitates and arsenic-antisite (AsGa)-related traps, in GaAs epilayers grown by molecular beam epitaxy at low temperatures, they are seldom examined simultaneously. In this letter, we report the detection of both defects in electron trap spectrum obtained by zero quiescent bias voltage transient current spectroscopy. The As precipitates appear as a broad continuum of states in the lower temperature region (
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/114535
ISSN: 00036951
Appears in Collections:Staff Publications

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