Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures

Abstract

Despite many separate studies of the two dominant defects, i.e., As precipitates and arsenic-antisite (AsGa)-related traps, in GaAs epilayers grown by molecular beam epitaxy at low temperatures, they are seldom examined simultaneously. In this letter, we report the detection of both defects in electron trap spectrum obtained by zero quiescent bias voltage transient current spectroscopy. The As precipitates appear as a broad continuum of states in the lower temperature region (