Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.026301jss
Title: Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films
Authors: Lin, F. 
Hoex, B. 
Koh, Y.H.
Lin, J. 
Aberle, A.G. 
Issue Date: 2013
Citation: Lin, F., Hoex, B., Koh, Y.H., Lin, J., Aberle, A.G. (2013). Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films. ECS Journal of Solid State Science and Technology 2 (1) : N11-N14. ScholarBank@NUS Repository. https://doi.org/10.1149/2.026301jss
Abstract: Hafnium oxide (HfO2) films synthesized by thermal atomic layer deposition (ALD) are investigated for low-temperature surface passivation of moderately doped crystalline silicon (c-Si). At intermediate bulk injection levels, effective surface recombination velocities of 55 cm/s and 24 cm/s are achieved on 2.1 σcm p-type and 3.3 σcm n-type c-Si, respectively, demonstrating a good level of surface passivation. Contactless corona-voltage measurements show that the good passivation quality is due to both chemical passivation with low interface defect density (∼1011 eV.1 cm -2) and field-effect passivation by negative charges (∼1012 cm-2) in the HfO2 film, which is particularly beneficial for the passivation of p-type c-Si. Fourier transform infrared spectroscopy and crosssectional transmission electron microscopy experiments are conducted to provide insight into the surface passivation mechanism of HfO2 on c-Si. © 2012 The Electrochemical Society.
Source Title: ECS Journal of Solid State Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/113260
ISSN: 21628769
DOI: 10.1149/2.026301jss
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