Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2010.2050953
Title: The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter
Authors: Bock, R.
Schmidt, J.
Mau, S.
Hoex, B. 
Brendel, R.
Keywords: Aluminium oxide
amorphus silicon
atomic layer deposition
emitter passivation
n-type silicon
passivation
photovoltaic cells
screen-printed emitter
Issue Date: Aug-2010
Citation: Bock, R., Schmidt, J., Mau, S., Hoex, B., Brendel, R. (2010-08). The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter. IEEE Transactions on Electron Devices 57 (8) : 1966-1971. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2050953
Abstract: Aluminum-doped p-type (Al- p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al 2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screen-printed Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al 2O3SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900 °C. We implement our newly developed passivated Al-p+ emitter into an n+np + solar cell structure, the so-called ALU+cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept. © 2006 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/113253
ISSN: 00189383
DOI: 10.1109/TED.2010.2050953
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