Please use this identifier to cite or link to this item:
|Title:||XPS study of incident angle effects on the ion beam modification of InP surfaces by 6 keV O2 +|
|Authors:||Pan, J.S. |
|Source:||Pan, J.S.,Tay, S.T.,Huan, C.H.A.,Wee, A.T.S. (1999). XPS study of incident angle effects on the ion beam modification of InP surfaces by 6 keV O2 +. Surface and Interface Analysis 27 (11) : 993-997. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199911)27:113.0.CO;2-J|
|Abstract:||The interaction of 6 keV oxygen ions with InP surfaces was studied as a function of O2 + ion incident angle. The bombarded InP surfaces were characterized in situ by x-ray photoelectron spectroscopy (XPS). The XPS measurements suggest that surface oxide layers formed by O2 + bombardment comprise a mixture of In2O3 and InP oxide. The degree of InP oxidation decreases with increasing incident angle. The O2 + bombardment also causes depletion of phosphorus from the surface region due to the preferential sputtering of phosphorus from InP. However, the preferential sputtering of phosphorus reduces with increasing incident angle. This decrease of the preferential sputtering of phosphorus is related to reduced oxidation when increasing the incident angle.|
|Source Title:||Surface and Interface Analysis|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.