Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/113118
Title: Study of copper diffusion into tantalum and tantalum diffusion into copper
Authors: Loh, S.W.
Zhang, D.H.
Li, C.Y.
Liu, R. 
Wee, A.T.S. 
Issue Date: 20-Jan-2002
Source: Loh, S.W.,Zhang, D.H.,Li, C.Y.,Liu, R.,Wee, A.T.S. (2002-01-20). Study of copper diffusion into tantalum and tantalum diffusion into copper. International Journal of Modern Physics B 16 (1-2) : 100-107. ScholarBank@NUS Repository.
Abstract: We have carried out direct diffusion measurements of Cu into Ta and Ta into Cu. Thin films of 50nm thickness of Cu were grown onto a thick Ta layer of 1μm by Ionized Metal Plasma. Samples were annealed in a rapid thermal system from temperatures ranging from 400°C to 800°C for periods of 60s and 180s. The diffusion profile was performed using Secondary ion mass spectroscopy. The Cu diffusion coefficients in Ta can be described by 3.0246 × 10-15 exp (-0.1747eV/kT) at 60s and 2.7532 × 10-15 exp (-0.1737eV/kT) at 180s. The Ta diffusion coefficients in Cu can be described by 2.07051 × 10-15 exp (-0.1773eV/kT) at 60s and 2.1271 × 10-15 exp (-0.1753eV/kT) at 180s. To assure reliability, the extent of both diffusions should be considered in device design and processing.
Source Title: International Journal of Modern Physics B
URI: http://scholarbank.nus.edu.sg/handle/10635/113118
ISSN: 02179792
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