Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.166

Title:	Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
Authors:	Yang, L.Y. Zhang, D.H. Li, C.Y. Liu, R. Lu, P.W. Foo, P.D. Wee, A.T.S.
Keywords:	Cu metallization SiCN TaN Ultra low k polymer
Issue Date:	10-May-2006
Citation:	Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S. (2006-05-10). Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration. Thin Solid Films 504 (1-2) : 265-268. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.166
Abstract:	This paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k < 2.3) integration using various techniques. It was found that SiCN dielectric is much better than TaN for the Cu-Ultra low k (ULK) integration. Upon thermal annealing at 400 °C for different periods of time, TEM images revealed strong intermixing at the two interfaces of Cu/TaN/ULK structures but no sign of diffusion in Cu/SiCN/ULK structure even after being annealed at 400 °C for 150 min. The strong intermixing in the Cu/TaN/ULK structure results from grain boundaries in the TaN film and porosity of the dielectric, while the excellent reliability of the Cu/SiCN/ULK dielectric is ascribed to the amorphous structure and high thermal stability of the SiCN film.
Source Title:	Thin Solid Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/113110
ISSN:	00406090
DOI:	10.1016/j.tsf.2005.09.166
Appears in Collections:	Staff Publications

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