Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.166
Title: Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
Authors: Yang, L.Y.
Zhang, D.H.
Li, C.Y.
Liu, R. 
Lu, P.W.
Foo, P.D.
Wee, A.T.S. 
Keywords: Cu metallization
SiCN
TaN
Ultra low k polymer
Issue Date: 10-May-2006
Citation: Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S. (2006-05-10). Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration. Thin Solid Films 504 (1-2) : 265-268. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.166
Abstract: This paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k < 2.3) integration using various techniques. It was found that SiCN dielectric is much better than TaN for the Cu-Ultra low k (ULK) integration. Upon thermal annealing at 400 °C for different periods of time, TEM images revealed strong intermixing at the two interfaces of Cu/TaN/ULK structures but no sign of diffusion in Cu/SiCN/ULK structure even after being annealed at 400 °C for 150 min. The strong intermixing in the Cu/TaN/ULK structure results from grain boundaries in the TaN film and porosity of the dielectric, while the excellent reliability of the Cu/SiCN/ULK dielectric is ascribed to the amorphous structure and high thermal stability of the SiCN film.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/113110
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.166
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

15
checked on Jul 17, 2018

WEB OF SCIENCETM
Citations

11
checked on Jun 27, 2018

Page view(s)

64
checked on Jun 29, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.