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|Title:||SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substrates|
|Keywords:||Backside SIMS depth profiling|
Secondary ion mass spectrometry
|Citation:||Yeo, K.L., Wee, A.T.S., Liu, R., Ng, C.M., See, A. (2002-05). SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substrates. Surface and Interface Analysis 33 (5) : 373-375. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.1216|
|Abstract:||We report the use of secondary ion mass spectrometry (SIMS) backside depth profiling for ultrashallow implants using silicon-on-insulator (SOI) wafers for substrate thinning. The SOI layer, after removal of the buried oxide layer, provides a smooth and flat surface for high-resolution SIMS depth profiling from the backside. The dopant distribution of 0.5 keV boron implants (5 × 1014 atoms cm-2) was studied by performing both front and backside depth profiling using 0.5-5 keV O2 + primary ions at oblique incidence in a Cameca IMS-6f SIMS instrument, with and without sample rotation. The backside depth profiles give significant improvement in depth resolution compared with conventional frontside SIMS depth profiling. Copyright © 2002 John Wiley & Sons, Ltd.|
|Source Title:||Surface and Interface Analysis|
|Appears in Collections:||Staff Publications|
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