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|Title:||Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructures|
|Source:||Lau, G.S.,Tok, E.S.,Liu, R.,Wee, A.T.S.,Tjiu, W.C.,Zhang, J. (2003-11). Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructures. Nanotechnology 14 (11) : 1187-1191. ScholarBank@NUS Repository. https://doi.org/11/005|
|Abstract:||Arrays of nanoscale depressions were observed during sputtering of Si/SiGe heterostructures using 500 eV O2 + ions at angles of incidence between 46° and 56° with simultaneous sample rotation in a secondary ion mass spectrometry system. Both the atomic force microscope and transmission electron microscope results suggest that these depressions were produced as a result of preferential sputtering of Ge and only occur when there are undulations present at the Si/SiGe interface. Formation of the interface undulation appears to occur in tandem with the increase in the Ge surface segregation at the Si/SiGe interface for layers grown at elevated temperatures.|
|Appears in Collections:||Staff Publications|
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