Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/14/11/005
Title: Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructures
Authors: Lau, G.S.
Tok, E.S. 
Liu, R. 
Wee, A.T.S. 
Tjiu, W.C.
Zhang, J.
Issue Date: Nov-2003
Citation: Lau, G.S., Tok, E.S., Liu, R., Wee, A.T.S., Tjiu, W.C., Zhang, J. (2003-11). Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructures. Nanotechnology 14 (11) : 1187-1191. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/14/11/005
Abstract: Arrays of nanoscale depressions were observed during sputtering of Si/SiGe heterostructures using 500 eV O2 + ions at angles of incidence between 46° and 56° with simultaneous sample rotation in a secondary ion mass spectrometry system. Both the atomic force microscope and transmission electron microscope results suggest that these depressions were produced as a result of preferential sputtering of Ge and only occur when there are undulations present at the Si/SiGe interface. Formation of the interface undulation appears to occur in tandem with the increase in the Ge surface segregation at the Si/SiGe interface for layers grown at elevated temperatures.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/113094
ISSN: 09574484
DOI: 10.1088/0957-4484/14/11/005
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