Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10854-005-0548-9
Title: Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxy
Authors: Cheah, W.K.
Fan, W.J.
Tan, K.H.
Yoon, S.F.
Zhang, D.H.
Mei, T.
Liu, R. 
Wee, A.T. 
Issue Date: May-2005
Citation: Cheah, W.K., Fan, W.J., Tan, K.H., Yoon, S.F., Zhang, D.H., Mei, T., Liu, R., Wee, A.T. (2005-05). Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxy. Journal of Materials Science: Materials in Electronics 16 (5) : 301-307. ScholarBank@NUS Repository. https://doi.org/10.1007/s10854-005-0548-9
Abstract: The GaAs-based double-heterojunction P-i-N structures using InzGa1-zAs1-x-yNx Sby as the i-layer is investigated for the first time using solid source molecular beam epitaxy. High quality coherent bulk InGaAsN3.45%Sb (0.5 μm) with a lattice-mismatch of 2.6 × 10-3 can be achieved due to the surfactant properties of antimony, while the bulk InGaAsN2% at 0.5 μm with 1.06 × 10-3 mismatch is fully relaxed. Rapid thermal annealing (RTA) resulted in ∼25 meV low temperature (LT) photoluminescence (PL) full-width half- maximums (FWHM) for the bulk InGaAsNSb layers. InGaAsNSb experiences 30% less blueshifting with subjected under the same annealing conditions as InGaAsN with similar N content. Room temperature (RT) absorption measurements are in the range of 0.9-1.4 eV. The absorption edge of 1.41 μm is achieved for sample D4. © 2005 Springer Science + Business Media, Inc.
Source Title: Journal of Materials Science: Materials in Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/113073
ISSN: 09574522
DOI: 10.1007/s10854-005-0548-9
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