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https://doi.org/10.1007/s10854-005-0548-9
Title: | Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxy | Authors: | Cheah, W.K. Fan, W.J. Tan, K.H. Yoon, S.F. Zhang, D.H. Mei, T. Liu, R. Wee, A.T. |
Issue Date: | May-2005 | Citation: | Cheah, W.K., Fan, W.J., Tan, K.H., Yoon, S.F., Zhang, D.H., Mei, T., Liu, R., Wee, A.T. (2005-05). Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxy. Journal of Materials Science: Materials in Electronics 16 (5) : 301-307. ScholarBank@NUS Repository. https://doi.org/10.1007/s10854-005-0548-9 | Abstract: | The GaAs-based double-heterojunction P-i-N structures using InzGa1-zAs1-x-yNx Sby as the i-layer is investigated for the first time using solid source molecular beam epitaxy. High quality coherent bulk InGaAsN3.45%Sb (0.5 μm) with a lattice-mismatch of 2.6 × 10-3 can be achieved due to the surfactant properties of antimony, while the bulk InGaAsN2% at 0.5 μm with 1.06 × 10-3 mismatch is fully relaxed. Rapid thermal annealing (RTA) resulted in ∼25 meV low temperature (LT) photoluminescence (PL) full-width half- maximums (FWHM) for the bulk InGaAsNSb layers. InGaAsNSb experiences 30% less blueshifting with subjected under the same annealing conditions as InGaAsN with similar N content. Room temperature (RT) absorption measurements are in the range of 0.9-1.4 eV. The absorption edge of 1.41 μm is achieved for sample D4. © 2005 Springer Science + Business Media, Inc. | Source Title: | Journal of Materials Science: Materials in Electronics | URI: | http://scholarbank.nus.edu.sg/handle/10635/113073 | ISSN: | 09574522 | DOI: | 10.1007/s10854-005-0548-9 |
Appears in Collections: | Staff Publications |
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