Please use this identifier to cite or link to this item:
|Title:||Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxy|
|Citation:||Cheah, W.K., Fan, W.J., Tan, K.H., Yoon, S.F., Zhang, D.H., Mei, T., Liu, R., Wee, A.T. (2005-05). Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxy. Journal of Materials Science: Materials in Electronics 16 (5) : 301-307. ScholarBank@NUS Repository. https://doi.org/10.1007/s10854-005-0548-9|
|Abstract:||The GaAs-based double-heterojunction P-i-N structures using InzGa1-zAs1-x-yNx Sby as the i-layer is investigated for the first time using solid source molecular beam epitaxy. High quality coherent bulk InGaAsN3.45%Sb (0.5 μm) with a lattice-mismatch of 2.6 × 10-3 can be achieved due to the surfactant properties of antimony, while the bulk InGaAsN2% at 0.5 μm with 1.06 × 10-3 mismatch is fully relaxed. Rapid thermal annealing (RTA) resulted in ∼25 meV low temperature (LT) photoluminescence (PL) full-width half- maximums (FWHM) for the bulk InGaAsNSb layers. InGaAsNSb experiences 30% less blueshifting with subjected under the same annealing conditions as InGaAsN with similar N content. Room temperature (RT) absorption measurements are in the range of 0.9-1.4 eV. The absorption edge of 1.41 μm is achieved for sample D4. © 2005 Springer Science + Business Media, Inc.|
|Source Title:||Journal of Materials Science: Materials in Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 16, 2018
WEB OF SCIENCETM
checked on May 8, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.