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https://scholarbank.nus.edu.sg/handle/10635/112976
| Title: | Effect of oxide field on hot carrier induced degradation in CMOS gate oxide | Authors: | Zhao, S.P. Taylor, S. |
Issue Date: | 1995 | Citation: | Zhao, S.P.,Taylor, S. (1995). Effect of oxide field on hot carrier induced degradation in CMOS gate oxide. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 91-95. ScholarBank@NUS Repository. | Abstract: | In this study, substrate hot electron injection (SHE) experiments have been carried out on n-MOSFETs. The effects of the oxide field on the hot electron induced degradation has been studied systematically. The oxide field dependence of the trapping over the field range from 0.5 to 6 MV/cm for different injection levels has been investigated. | Source Title: | Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA | URI: | http://scholarbank.nus.edu.sg/handle/10635/112976 |
| Appears in Collections: | Staff Publications |
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