Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/112976
Title: Effect of oxide field on hot carrier induced degradation in CMOS gate oxide
Authors: Zhao, S.P. 
Taylor, S.
Issue Date: 1995
Citation: Zhao, S.P.,Taylor, S. (1995). Effect of oxide field on hot carrier induced degradation in CMOS gate oxide. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 91-95. ScholarBank@NUS Repository.
Abstract: In this study, substrate hot electron injection (SHE) experiments have been carried out on n-MOSFETs. The effects of the oxide field on the hot electron induced degradation has been studied systematically. The oxide field dependence of the trapping over the field range from 0.5 to 6 MV/cm for different injection levels has been investigated.
Source Title: Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/112976
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