Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1846955
Title: Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy
Authors: Xie, X.N. 
Chung, H.J. 
Sow, C.H. 
Wee, A.T.S. 
Issue Date: 10-Jan-2005
Citation: Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2005-01-10). Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy. Applied Physics Letters 86 (2) : 023112-1. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1846955
Abstract: We report an investigation on the stress-induced breakdown (BD) in ultrathin oxide grown by atomic force microscopy (AFM oxide). A conducting atomic force microscopy (c-AFM) technique was employed to stress the AFM oxide and examine its BD behavior. It was found that thermal annealing has a strong impact on the dielectric strength of AFM oxide. The stress-induced trap generation probability, Pt, could be reduced by ~50% after annealing the oxide at elevated temperatures. Such a thermal effect is related to the local structural relaxation and trap state minimization in AFM oxide upon annealing. The spatially resolved current images allow a microscopic diagnosis of the distribution of BD sites: isolated single BD spots and laterally propagated BD areas were observed in an oxide dot. Soft and hard breakdown sites were also distinguished on the current images. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/112651
ISSN: 00036951
DOI: 10.1063/1.1846955
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

11
checked on Oct 17, 2018

WEB OF SCIENCETM
Citations

11
checked on Oct 17, 2018

Page view(s)

41
checked on Oct 12, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.