Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3242005

Title:	Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure
Authors:	Gao, X. Chen, S. Liu, T. Chen, W. Wee, A.T.S. Nomoto, T. Yagi, S. Soda, K. Yuhara, J.
Issue Date:	2009
Citation:	Gao, X., Chen, S., Liu, T., Chen, W., Wee, A.T.S., Nomoto, T., Yagi, S., Soda, K., Yuhara, J. (2009). Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure. Applied Physics Letters 95 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3242005
Abstract:	The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si-Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 63×63R 30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC. © 2009 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/112648
ISSN:	00036951
DOI:	10.1063/1.3242005
Appears in Collections:	Staff Publications

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