Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2013.01.040
Title: Ferromagnetism in Cr doped In2O3
Authors: Yi, J.B.
Bao, N.N. 
Luo, X.
Fan, H.M.
Liu, T.
Li, S.
Keywords: Chromium doped indium oxide
Diluted magnetic semiconductors
Ferromagnetism
Pulsed laser deposition
Issue Date: 2013
Source: Yi, J.B., Bao, N.N., Luo, X., Fan, H.M., Liu, T., Li, S. (2013). Ferromagnetism in Cr doped In2O3. Thin Solid Films 531 : 481-486. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2013.01.040
Abstract: In this work, we deposited 5%Ta-5%Cr-In2O3 film on LaAlO3(001) substrate as an example to investigate the effect of electron doping, oxygen partial pressure and thickness on the ferromagnetism. The ferromagnetism is strongly dependent on oxygen partial pressure. Films deposited under low oxygen partial pressure leads to the enhancement of ferromagnetism. However, the electron doping through Ta dopant has a limit influence on the magnetism, suggesting that the film may not be carrier-mediated. Through the X-ray magnetic circular dichroism study, no magnetic moment can be found in Cr, In and O edge, suggesting that the ferromagnetism may be originated from defects. Magnetoresistance and anomalous Hall effect can be observed at low temperature in the film deposited under low oxygen partial pressure. Hence, these two properties may not be as an indication of intrinsic ferromagnetism. © 2013 Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/112601
ISSN: 00406090
DOI: 10.1016/j.tsf.2013.01.040
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