The frequency-dependent average power handling capability of metal-insulator semiconductor (MIS) microstrip interconnects

Abstract

The average power handling capabilities (APHC) of various metal-insulator-semiconductor (MIS) microstrip configurations are studied and compared in this work. The methodology is based on the accurately extracted conductive and substrate attenuation constants, and the proposed thermal models to predict the rise in temperature, where the silicon substrate is characterized by an effective thickness determined by the complex image method. Numerical results are given to show the effects of strip thickness and width, silicon conductivity and isolation thickness, etc, on the APHC of different MIS microstrip interconnects. Approaches to effectively enhance the APHC are also indicated.