Please use this identifier to cite or link to this item:
|Title:||In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C|
A. Surfaces and interfaces
A. Thin films
|Citation:||Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chan, L. (2003-12). In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C. Solid State Communications 128 (9-10) : 325-328. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssc.2003.09.004|
|Abstract:||The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides. © 2003 Elsevier Ltd. All rights reserved.|
|Source Title:||Solid State Communications|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 15, 2018
WEB OF SCIENCETM
checked on Oct 8, 2018
checked on Oct 5, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.