Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ssc.2003.09.004
Title: In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C
Authors: Lee, P.S.
Pey, K.L.
Mangelinck, D.
Ding, J. 
Chan, L.
Keywords: A. Semiconductor
A. Surfaces and interfaces
A. Thin films
Issue Date: Dec-2003
Citation: Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chan, L. (2003-12). In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C. Solid State Communications 128 (9-10) : 325-328. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssc.2003.09.004
Abstract: The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides. © 2003 Elsevier Ltd. All rights reserved.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/107332
ISSN: 00381098
DOI: 10.1016/j.ssc.2003.09.004
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