Please use this identifier to cite or link to this item:
|Title:||Study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications|
|Citation:||Lim, C.W., Bourdillon, A.J., Gong, H., Lahiri, S.K., Pey, K.L., Lee, K.H. (1999). Study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications. Journal of Materials Science Letters 18 (9) : 743-746. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006616917188|
|Abstract:||The impact of N+ ions on the formation of TiSi2 thin film is studied. The substrates used were 200 mm diameter p-type (100)-oriented silicon wafers. Nitrogen were introduced through the ion implantation technique. All samples were processed until formation of the first metal layer to facilitate electrical testing of narrow poly-Si and active diffusion sheet resistance. The thickness of the film was determined by scanning electron microscopy. Cross sectional transmission electron microscopy was carried out to characterize their defects. Partial activation of N+ ions as n-type dopant was observed, which caused a negative-shifting in threshold voltage and a junction-deepening effect.|
|Source Title:||Journal of Materials Science Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.