Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1938249
Title: Study on anomalous n -type conduction of P-doped ZnO using P2 O5 dopant source
Authors: Yu, Z.G.
Gong, H. 
Wu, P.
Issue Date: 23-May-2005
Citation: Yu, Z.G., Gong, H., Wu, P. (2005-05-23). Study on anomalous n -type conduction of P-doped ZnO using P2 O5 dopant source. Applied Physics Letters 86 (21) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1938249
Abstract: The unexpected n -type conduction observed in P-doped ZnO thin films fabricated from rf magnetron sputtering, was studied systematically through a combined approach of experiment and computer modeling. The carrier stability was predicted from first-principles density functional theory and chemical thermodynamic calculations. It demonstrated that, under oxygen-poor growth condition and low temperature, the stable doping defect PO -1 may have negative effect on n -type conduction and, under oxygen-poor growth condition and high temperature, the stable doping defect may contribute significantly to the n -type conduction. Furthermore, under oxygen-rich growth condition, the stable doping defect PZn1 may help to maintain the n -type conduction at high oxygen partial pressures. Our model predictions are in good agreement with experimental observations in anomalous conduction of P2 O5 -doped ZnO thin films and provide scientific explanation. This research not only revealed increased fundamental understanding on electronic behaviors but also provided a fabrication strategy for P-doped n -type ZnO. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/107216
ISSN: 00036951
DOI: 10.1063/1.1938249
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