Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0167-577X(00)00392-X
Title: Nanocrystalline Si3N4 with Si-C-N shell structure
Authors: Junmin, X. 
Wang, J. 
Keywords: Mechanical activation
Nanocrystalline
Silicon carbon nitride
Silicon nitride
Issue Date: Jul-2001
Citation: Junmin, X., Wang, J. (2001-07). Nanocrystalline Si3N4 with Si-C-N shell structure. Materials Letters 49 (6) : 318-323. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-577X(00)00392-X
Abstract: Nanocrystalline Si3N4 with an amorphous Si-C-N shell structure was synthesized by mechanically activating Si3N4 and graphite powder in argon atmosphere at room temperature. Twenty hours of mechanical activation resulted in occurrence of C-N bond, which can be identified using Fourier transform infrared spectrometry (FT-IR). When the mechanical activation period was extended to 67 h and then to 90 h, the C-N bond was further established. The formation of C-N bond under the mechanical activation for 90 h was further confirmed using X-ray photoelectron spectroscopy (XPS). The thickness of Si-C-N shell is 5-7 nm as observed using high-resolution transmission electron microscope. © 2001 Elsevier Science B.V.
Source Title: Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/107139
ISSN: 0167577X
DOI: 10.1016/S0167-577X(00)00392-X
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