Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1834986
Title: Ferroelectric behaviors and charge carriers in Nd-doped Bi 4Ti 3O 12 thin films
Authors: Gao, X.S. 
Xue, J.M. 
Wang, J. 
Issue Date: 1-Feb-2005
Citation: Gao, X.S., Xue, J.M., Wang, J. (2005-02-01). Ferroelectric behaviors and charge carriers in Nd-doped Bi 4Ti 3O 12 thin films. Journal of Applied Physics 97 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1834986
Abstract: Nd-doped Bi 4Ti 3O 12 thin films, (Bi 3.25Nd 0.85) 4Ti 3O 12, of layered perovskite structure were synthesized by if sputtering, followed by postannealing at 600-700°C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650-750°C. When annealed at 700°C, a remanent polarization 2P r of 25.2 μC/cm 2 and a coercive field E C of 87.2 kV/cm were measured at 9 V, together with an almost fatigue-free behavior up to 1.4 × 10 10 switching cycles. Their ferroelectric, dielectric, and ac conductivity properties over the temperature range from 25 to 300°C were studied over the frequency range of 0.1-1 MHz. Space-charge relaxation by oxygen vacancies was shown to play an important role in determining the dielectric and conductivity behaviors of Nd-doped Bi 4Ti 3O 12 thin films. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/107041
ISSN: 00218979
DOI: 10.1063/1.1834986
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