Please use this identifier to cite or link to this item:
|Title:||Direct observations of the mechanism of nickel suicide formation on Si(100) and Si 0.75Ge 0.25 substrates|
|Citation:||Nath, R., Yeadon, M. (2004). Direct observations of the mechanism of nickel suicide formation on Si(100) and Si 0.75Ge 0.25 substrates. Electrochemical and Solid-State Letters 7 (10) : G231-G234. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1789851|
|Abstract:||The annealing of Ni layers, 12 nm thick, deposited on Si(100) and relaxed Si 0.75Ge 0.25 substrates has been studied using an ultrahigh vacuum in situ transmission electron microscope. In this paper we report direct observations of the formation and agglomeration of nickel monosilicide films, followed by the nucleation of NiSi 2 at higher temperatures in both cases. This transformation has not been observed previously in the case of Si 1-xGe x, substrates, the reaction being suppressed from 650 to ∼950°C in the presence of Ge. Our data provides strong evidence of the importance of surface relaxation in the relief of transformation-induced strain. © 2004 The Electrochemical Society. All rights reserved.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 15, 2019
WEB OF SCIENCETM
checked on Jan 29, 2019
checked on Jul 27, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.