Wang, S.J.Dong, Y.F.Huan, C.H.A.Feng, Y.P.Ong, C.K.PHYSICS2014-10-162014-10-162005-04-25Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K. (2005-04-25). The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 (1-3) : 122-126. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2004.12.02309215107https://scholarbank.nus.edu.sg/handle/10635/98921The epitaxial ZrO2 on silicon as alternative gate dielectric, including film growth, interface characterization and electronic structure calculations, have been studied using a combination of characterization tools. The films grown by pulsed laser deposition have high-quality microstructure and electrical properties. The atomic structure and band alignment at the ZrO 2/Si interfaces have been determined by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Relative stabilities and electronic properties of interface structure have been discussed and compared from the view of experimental and calculated results. © 2005 Elsevier B.V. All rights reserved.Epitaxial ZrO2Pulsed laser depositionX-ray photoelectron spectroscopyConference Paper000228514800026