Wang, L.Su, S.Wang, W.Gong, X.Yang, Y.Guo, P.Zhang, G.Xue, C.Cheng, B.Han, G.Yeo, Y.-C.ELECTRICAL & COMPUTER ENGINEERING2014-10-072014-10-072012Wang, L.,Su, S.,Wang, W.,Gong, X.,Yang, Y.,Guo, P.,Zhang, G.,Xue, C.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 44-45. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISTDM.2012.6222449" target="_blank">https://doi.org/10.1109/ISTDM.2012.6222449</a>9781457718625https://scholarbank.nus.edu.sg/handle/10635/83287In this work, we report high mobility Ge 0.958Sn 0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge 0.958Sn 0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/Vs and a subthreshold swing S of 220 mV/decade. © 2012 IEEE.Conference PaperNOT_IN_WOS