Jiang, J.Bae, S.Kim, S.ELECTRICAL & COMPUTER ENGINEERING2014-10-072014-10-072007-06Jiang, J., Bae, S., Kim, S. (2007-06). Effects of Cu interdiffusion on the electromigration failure of FM/Cu/FM tri-layers for spin valve read sensors. IEEE Transactions on Magnetics 43 (6) : 2836-2838. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2007.89311800189464https://scholarbank.nus.edu.sg/handle/10635/83677Electromigration-induced failure (EIF) lifetime characteristics of FM/Cu/FM (FM: NiFe or Co) tri-layers, which are currently used in GMR spin-valve read sensors, have been investigated to verify the fundamental failure mechanisms. It is found that the lifetime of NiFe/Cu/NiFe tri-layers was dramatically increased by decreasing the Cu spacer thickness. The obvious shorter lifetime of NiFe/Cu/NiFe tri-layers compared to that of Co/Cu/Co tri-layers was mainly thought to be attributed to the formation of current paths resulted from the electromigration-induced Cu interdiffusion into the top or bottom NiFe layer during electrical stressing caused by the Ni-Cu intermixing. The activation energy (Ea) and current density factor, "n" value of the NiFe/Cu/NiFe tri-layers were found to be 0.23-0.25 eV and 1.23-1.32, respectively. It is suggested that the control of Cu spacer interdiffusion and chemical roughness at the FM/Cu interface is crucial in determining the electrical reliability of FM/Cu/FM based GMR spin valve read sensors. © 2007 IEEE.Cu spacer microstructureElectromigrationFM/Cu spacer interfaceFM/Cu/FM tri-layersInterdiffusion of Cu spacerConference Paper000246706200248