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|Title:||XPS and SIMS studies of CVD-grown cubic SiC films on Si(100)||Authors:||Wee, A.T.S.
|Issue Date:||1994||Citation:||Wee, A.T.S.,Feng, Z.C.,Hng, H.H.,Tan, K.L.,Tin, C.C.,Hu, R.,Coston, R. (1994). XPS and SIMS studies of CVD-grown cubic SiC films on Si(100). Materials Research Society Symposium - Proceedings 339 : 411-416. ScholarBank@NUS Repository.||Abstract:||A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/98954||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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