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Title: Surface and interface properties of ion implanted 4H-silicon carbide
Authors: Feng, Z.C.
Lin, J. 
Yan, F.
Zhao, J.H.
Issue Date: 20-Jan-2002
Citation: Feng, Z.C.,Lin, J.,Yan, F.,Zhao, J.H. (2002-01-20). Surface and interface properties of ion implanted 4H-silicon carbide. International Journal of Modern Physics B 16 (1-2) : 151-158. ScholarBank@NUS Repository.
Abstract: A series of ion-implanted 4H-SiC epilayers, Aluminum (Al) - Carbon (C) co-implanted and Al single implanted, have been studied by micro-Raman scattering, Fourier transform infrared (FTIR), and UV-Visible (200-1100 nm) optical transmission (OT) measurements. The damage and amorphization of SiC layer by ion-implantation, and the elimination or suppression of the implantation induced amorphous layer via high temperature annealing are evidenced. The recovery of the crystallinity and the activation of the implant acceptors are confirmed. Theoretical simulations on the spectroscopic features, for FTIR reflectance spectra, are performed based upon the structural model. The results from different ion implantation conditions are compared. This work also provides a non-destructive and convenient way to investigate the effects of ion implantation/annealing on SiC materials.
Source Title: International Journal of Modern Physics B
ISSN: 02179792
Appears in Collections:Staff Publications

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